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| SKIM459GD12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE 15 V VCES 1200 V VGES tpsc Tj Inverse diode IF Ts = 25 C Ts = 70 C Tj = 150 C Tj = 175 C Ts = 25 C Ts = 70 C 1200 554 450 450 1350 -20 ... 20 10 -40 ... 175 438 347 450 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 1350 2430 -40 ... 175 700 -40 ... 125 AC sinus 50 Hz, t = 1 min 2500 V A A A A V s C A A A A A C A C V Conditions Values Unit SKiM(R) 93 Trench IGBT Modules SKIM459GD12E4 Tj = 175 C IFnom Features * IGBT 4 Trench Gate Technology * Solderless sinter technology * VCE(sat) with positive temperature coefficient * Low inductance case * Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate * Pressure contact technology forthermal contacts and electricalcontacts * High short circuit capability, self limiting to 6 x IC * Integrated temperature sensor IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-s) IC = 450 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C f = 1 MHz f = 1 MHz f = 1 MHz 1.85 2.25 0.8 0.7 2.3 3.4 5.8 0.1 26.4 1.74 1.41 2550 1.7 Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C 276 55 22 538 114 57 0.092 2.10 2.45 0.9 0.8 2.7 3.7 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Typical Applications * Automotive inverter * High reliability AC inverter wind * High reliability AC inverter drives VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 450 A RG on = 1.3 RG off = 1.3 di/dton = 8340 A/s di/dtoff = 3660 A/s per IGBT GD (c) by SEMIKRON Rev. 2 - 26.08.2009 1 SKIM459GD12E4 Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 450 A Tj = 150 C di/dtoff = 8880 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode min. typ. 2.1 2.1 1.3 0.9 1.9 2.6 570 80 40 max. 2.5 2.4 1.5 1.1 2.1 2.8 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 SKiM(R) 93 Trench IGBT Modules SKIM459GD12E4 IRRM Qrr Err Rth(j-s) Module LCE RCC'+EE' 0.155 10 15 K/W nH m m terminal-chip to heat sink (M4) Ts = 25 C Ts = 125 C 2.5 to terminals (M6) 3 0.3 0.5 4 5 1100 Features * IGBT 4 Trench Gate Technology * Solderless sinter technology * VCE(sat) with positive temperature coefficient * Low inductance case * Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate * Pressure contact technology forthermal contacts and electricalcontacts * High short circuit capability, self limiting to 6 x IC * Integrated temperature sensor Ms Mt w Nm Nm Nm g K Temperature sensor R100 B100/125 TSensor = 100 C (R25 = 5 k) R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 339 4096 Typical Applications * Automotive inverter * High reliability AC inverter wind * High reliability AC inverter drives GD 2 Rev. 2 - 26.08.2009 (c) by SEMIKRON SKIM459GD12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 2 - 26.08.2009 3 SKIM459GD12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 - 26.08.2009 (c) by SEMIKRON SKIM459GD12E4 SKIM(R) 93 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 2 - 26.08.2009 5 |
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